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| MOS FET FKV560FP (under development) Absolute Maximum Ratings Symbol VDSS VGSS ID ID (pulse) * PD Tch Tstg Ratings 50 20 60 180 VDS = 10V f = 1.0MHz VGS = 0V ID = 25A VDD 12V RL = 0.48 VGS = 10V ISD = 50A, VGS = 0V (16.2) 70 (Tc=25C) 150 -55 to +150 * PW 100s, duty 1% (Ta=25C) Unit V V A A W C C Electrical Characteristics Symbol V(BR) DSS IGSS IDSS VTH Re (yfs) RDS (ON) Ciss Coss Crss t d (on) tr td (off) tf VSD Test Conditions ID = 100A, VGS = 0V VGS = +20V VGS = -20V VDS = 50V, VGS = 0V VDS = 10V, ID = 250A VDS = 10V, ID = 25A VGS = 10V, ID = 25A min 50 +10 -5 100 2.3 9 2000 1000 150 To be defined 1.0 1.5 11 Ratings typ max (Ta=25C) Unit V External Dimensions FM100 (full-mold) 0.8 5.5 0.2 3.6 0.1 15.6 0.2 5.5 0.2 3.45 0.2 1.3 20.0 A V S m pF pF pF ns ns ns ns V 23.0 0.3 9.50.2 A 3.3 1.75 0.15 2.15 0.15 +0.2 1.05 -0.1 +0.2 1.6 a b 5.45 0.1 1.5 4.4 5.45 0.1 1.5 0.65 -0.1 3.35 0.2 G D S a) Type No. b) Lot No. (Unit: mm) 3.0 0.8 75 |
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